PART |
Description |
Maker |
IRF5850 IRF5850TR |
2200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET -20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package Ultra Low On-Resistance
|
International Rectifier
|
TPC8020-H |
MOSFET TPC Series Field Effect Transistor Silicon N Channel MOS Type (Ultra High-Speed U-MOSIII)
|
Toshiba Semiconductor
|
2SK304 2SK304D |
N-Channel Silicon MOSFET Low-Frequency Aplifier Applications N-Channel Junction Silicon FET 20 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
|
Sanyo
|
IRF7750GPBF |
HEXFET庐 Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET
|
International Rectifier
|
KRF7343 |
HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET
|
TY Semicondutor TY Semiconductor Co., Ltd
|
HAT1093C-EL-E HAT1095C-EL-E HAT1095C HAT1093C |
2000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET Silicon P Channel MOSFET Power Switching Silicon P Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
STL75NH3LL |
N-channel 30 V, 0.004 Ω, 20 A, PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET N-channel 30 V, 0.004 ヘ, 20 A, PowerFLAT⑩ (6x5) ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
STL6NM60N |
N-channel 600 V - 0.85 Ω - 5.75 A - PowerFLAT (5x5) ultra low gate charge MDmesh II Power MOSFET N-channel 600 V - 0.85 ヘ - 5.75 A - PowerFLAT⑩ (5x5) ultra low gate charge MDmesh⑩ II Power MOSFET
|
STMicroelectronics
|
3HP04SS |
200 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
SANYO SEMICONDUCTOR CO LTD Sanyo Semicon Device
|
2SK3980 |
900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
CMLM0205 |
MULTI DISCRETE MODULESURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE 280 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor, Corp.
|
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